schottky barrier diode features for use in low voltage, high frequency inverters free wheeling, and polarity protection applications. marking: B5817W: sj b5818w:sk b5819w: sl maximum ratings and electrical characteristics, single diode @t a =25 parameter symbol B5817W b5818w b5819w unit non-repetitive peak reverse voltage v rm 20 30 40 v peak repetitive peak reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 20 30 40 v rms reverse voltage v r(rms) 14 21 28 v average rectified output current i o 1 a peak forward surge current @=8.3ms i fsm 9 a repetitive peak forward current i frm 1.5 a power dissipation pd 50 0 mw thermal resistance junction to ambient r ja 2 50 storage temperature t stg -65~+150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min max unit reverse breakdown voltage v (br) i r = 1ma B5817W b5818w b5819w 20 30 40 v reverse voltage leakage current i r v r =20v B5817W v r =30v b5818w v r =40v b5819w 1 ma B5817W i f =1a i f =3a 0.45 0.75 v b5818w i f =1a i f =3a 0.55 0.875 v forward voltage v f b5819w i f =1a i f =3a 0.6 0.9 v diode capacitance c d v r =4v, f=1mhz 120 pf sod-123 - + /w B5817W-5819w 1 date:2011/05 www.htsemi.com semiconductor jinyu
typical characteristics B5817W-5819w 2 date:2011/05 www.htsemi.com semiconductor jinyu
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